datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Number :
Home  >>>  Intersil  >>> 10N40F1D PDF

10N40F1D Datasheet PDF - Intersil

Part Number10N40F1D Intersil
Intersil Intersil
Description10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10N40F1D Datasheet PDF : 10N40F1D pdf   
HGTP10N40C1D image

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25℃ and +150℃. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.

• 10A, 400V and 500V
• Latch Free Operation
• Typical Fall Time < 1.4µs
• High Input Impedance
• Low Conduction Loss
• Anti-Parallel Diode
• tRR < 60ns

Page Links : 1  2  3  4  5 
Share Link : 

Language : 한국어   简体中文   日本語   русский   español

@ 2014 - 2018  [ Home  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]