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10N40F1D Datasheet PDF - Intersil

Part Number10N40F1D Intersil
Intersil Intersil
Description10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10N40F1D Datasheet PDF : 10N40F1D pdf   
HGTP10N40C1D image

Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25℃ and +150℃. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.

Features
• 10A, 400V and 500V
• Latch Free Operation
• Typical Fall Time < 1.4µs
• High Input Impedance
• Low Conduction Loss
• Anti-Parallel Diode
• tRR < 60ns

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