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IKW20N60T Datasheet PDF - Infineon Technologies

Part Name
Description
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Other PDF
  2008  
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IKW20N60T Datasheet PDF : IKW20N60T pdf     
IKP20N60T image

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
    - Frequency Converters
    - Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
    - very tight parameter distribution
    - high ruggedness, temperature stable behavior
    - very high switching speed
    - low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

 

Part Name
Description
PDF
Manufacturer
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Unspecified
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode ®
Unspecified
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Unspecified
Low Loss IGBT in Trench and Fieldstop technology
Unspecified
EconoPACK3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
eupec GmbH
Low Loss and Soft Recovery High Performance Fast Recovery Diode Single Diode
IXYS CORPORATION
Low Loss IGBT in TrenchStop® and Fieldstop technology
Unspecified
High Performance Schottky Diode Low Loss and Soft Recovery Single Diode
IXYS CORPORATION
High Performance Schottky Diode Low Loss and Soft Recovery Single Diode
IXYS CORPORATION
GenX3™ 600V IGBT w/ SiC Anti-Parallel Diode
IXYS CORPORATION

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