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IS25LQ032C Datasheet PDF - Integrated Silicon Solution

Part NumberIS25LQ032C ISSI
Integrated Silicon Solution ISSI
Description32Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface
IS25LQ032C Datasheet PDF : IS25LQ032C pdf   


IS25LQ032C image

GENERAL DESCRIPTION
The IS25LQ032C are 32 Mbit Serial Peripheral Interface (SPI) Flash memories, providing single-, dual or quad output. The devices are designed to support a 33 MHz fclock rate in normal read mode, and 104 MHz in fast read (Quad output is 100MHz), the fastest in the industry. The devices use a single low voltage power supply, ranging from 2.7 Volt to 3.6 Volt, to perform read, erase and program operations. The devices can be programmed in standard EPROM programmers.
The IS25LQ032C are accessed through a 4-wire SPI Interface consisting of Serial Data Input/Output (Sl), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins. The devices support page program mode, where 1 to 256 bytes data can be programmed into the memory in one program operation. These devices are divided into uniform 4 KByte sectors or uniform 64 KByte blocks.
The IS25LQ032C are manufactured on pFLASH™’s advanced non-volatile technology. The devices are offered in 8-pin SOIC 208mil and 8-contact WSON.

FEATURES
• Single Power Supply Operation
   - Low voltage range: 2.7 V - 3.6 V
• Memory Organization
   - IS25LQ032C: 4096K x 8 (32 Mbit)
• Cost Effective Sector/Block Architecture
   - 32Mb : Uniform 4KByte sectors / sixty-four uniform 64KByte blocks
• Serial Peripheral Interface (SPI) Compatible
   - Supports single-, dual- or quad-output
   - Supports SPI Modes 0 and 3
   - Maximum 33 MHz clock rate for normal read
   - Maximum 104 MHz clock rate for fast read
   - Maximum 208MHz clock rate equivalent Dual SPI
   - Maximum 400MHz clock rate equivalent Quad SPI
• Byte Program Operation
   - Typical 8 us/Byte
• Page Program (up to 256 Bytes) Operation
   - Typical 1 ms per page program
• Sector, Block or Chip Erase Operation
   - Sector Erase (4KB)50ms (Typ)
   - Block Erase (64KB)500ms (Typ)
   - Chip Erase 15S (32Mb)
•Deep power-down mode 1uA (Typ) Security protect function
   - sector unlock (Appendix 1)
• Low Power Consumption
   - Max 15 mA active read current
   - Max 20 mA program/erase current
   - Max 30uA standby current
• Hardware Write Protection
   - Protect and unprotect the device from write
      operation by Write Protect (WP#) Pin
• Software Write Protection
   - The Block Protect (BP3, BP2, BP1, BP0) bits
      allow partial or entire memory to be configured as
      read-only
• High Product Endurance
   - Guaranteed 100,000 program/erase cycles per single sector
   - Minimum 20 years data retention
• Industrial Standard Pin-out and Package
   - 8-pin 208mil SOIC
   - 8-contact WSON
   - 16-pin 300mil SOP
   - 8-pin 208mil VSOP
   - Lead-free (Pb-free) package

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