datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Number :
Home  >>>  IR  >>> IRG4RC10SD PDF

IRG4RC10SD Datasheet PDF - International Rectifier

Part NumberIRG4RC10SD IR
International Rectifier IR
DescriptionINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Standard Speed CoPack IGBT
IRG4RC10SD Datasheet PDF : IRG4RC10SD pdf   
IRG4RC10SD image

Features
• Extremely low voltage drop 1.1V(typ) @ 2A
• S-Series: Minimizes power dissipation at up to 3
    KHz PWM frequency in inverter drives, up to 4
    KHz in brushless DC drives.
• Tight parameter distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
    ultra-soft-recovery anti-parallel diodes for use
    in bridge configurations
• Industry standard TO-252AA package
   
Benefits
• Generation 4 IGBTs offer highest efficiencies
    available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
    IGBTs . Minimized recovery characteristics require
    less/no snubbing
• Lower losses than MOSFETs conduction and
    Diode losses
   

 

Other manufacturer searches related to IRG4RC10SD

GA200SA60U Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A GA200SA60U View Vishay Semiconductors
GB75DA120UP Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A GB75DA120UP View Vishay Semiconductors
GA100NA60U Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A GA100NA60U View Vishay Semiconductors
NGTG30N60FWG Insulated Gate Bipolar Transistor (IGBT) NGTG30N60FWG View ON Semiconductor
GT40T302 Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 View Toshiba
1MB12-140 INSULATED GATE BIPOLAR TRANSISTOR (IGBT) 1MB12-140 View Fuji Electric
5N150UF Insulated Gate Bipolar Transistor (IGBT) 5N150UF View Fairchild Semiconductor
GT50J301 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 View Toshiba
GT8G131 Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 View Toshiba
GT8G133 Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 View Toshiba

Share Link : 

Language : 한국어   简体中文   日本語   русский   español


All Rights Reserved © datasheetbank.com 2014 - 2018  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]