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IRG4PC50FDPBF Datasheet PDF - International Rectifier

Part NameDescriptionManufacturer
IRG4PC50FDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT IR
International Rectifier IR
Other PDF  no available.
IRG4PC50FDPBF Datasheet PDF : IRG4PC50FDPBF pdf   
IRG4PC50FDPBF image

VCES = 600V
VCE(on) typ. = 1.45V
@VGE = 15V, IC = 39A

Benefits
• Generation -4 IGBT's offer highest efficiencies available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's

Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-247AC package
• Lead-Free

 

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