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IRF634N Datasheet PDF - International Rectifier

Part NumberIRF634N IR
International Rectifier IR
DescriptionHEXFET® Power MOSFET
IRF634N Datasheet PDF : IRF634N pdf   

IRF634NL image

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements

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