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IRF3808STRLPBF Datasheet PDF - International Rectifier

Part NameDescriptionManufacturer
IRF3808STRLPBF HEXFET® Power MOSFET IR
International Rectifier IR
IRF3808STRLPBF Datasheet PDF : IRF3808STRLPBF pdf   
IRF3808SPBF image

Description
This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in a wide variety of applications.

Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free

Typical Applications
● Industrial Motor Drive

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