This HEXFETÂźPower MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175Â°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
â Advanced Process Technology
â Ultra Low On-Resistance
â 175Â°C Operating Temperature
â Fast Switching
â Repetitive Avalanche Allowed up to Tjmax