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IRF1310S Datasheet PDF - International Rectifier

Part Name
Description
Manufacturer
IRF1310S
IR
International Rectifier IR
Other PDF
  no available.
PDF
IRF1310S Datasheet PDF : IRF1310S pdf     
IRF1310S image

VDSS = 100V
RDS(on) = 0.04Ω
ID = 41A

Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

● Advanced Process Technology
● Ultra Low On-Resistance
● Surface Mount
● Available in Tape & Reel
● Dynamic dv/dt Rating
● Repetitive Avalanche Rated
● 175°C Operating Temperature

 

Part Name
Description
PDF
Manufacturer
HEXFET® Power MOSFET
Unspecified
HEXFET®Power MOSFET
Unspecified
HEXFET Power MOSFET
Unspecified
HEXFET® Power MOSFET
Unspecified
HEXFET® Power MOSFET
Unspecified
HEXFET® Power MOSFET
Unspecified
HEXFET® Power MOSFET
Unspecified
HEXFET® Power MOSFET
Unspecified
HEXFET® Power MOSFET
Kersemi Electronic Co., Ltd.
HEXFET® Power MOSFET
Unspecified

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