Specifically designed for Automotive applications, this HEXFETÂź Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175Â°C junction operating tempera ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
â Advanced Process Technology
â Ultra Low On-Resistance
â 175Â°C Operating Temperature
â Fast Switching
â Repetitive Avalanche Allowed up to Tjmax