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IRF1010ZS Datasheet PDF - International Rectifier

Part Name
Description
Manufacturer
IRF1010ZS
IR
International Rectifier IR
Other PDF
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PDF
IRF1010ZS Datasheet PDF : IRF1010ZS pdf     
IRF1010Z image

AUTOMOTIVE MOSFET

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

Page Link's: 1  2  3  4  5  6  7  8  9  10  11  12 
 

Part Name
Description
PDF
Manufacturer
HEXFET® Power MOSFET
Unspecified
HEXFET®Power MOSFET
Unspecified
HEXFET Power MOSFET
Unspecified
HEXFET® Power MOSFET
Unspecified
HEXFET® Power MOSFET
Unspecified
HEXFET® Power MOSFET
Unspecified
HEXFET® Power MOSFET
Unspecified
HEXFET® Power MOSFET
Unspecified
HEXFET® Power MOSFET
Kersemi Electronic Co., Ltd.
HEXFET® Power MOSFET
Unspecified

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