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H27UAG8T2B Datasheet PDF - Hynix Semiconductor

Part NameDescriptionManufacturer
H27UAG8T2B 16Gbit (2048 M x 8 bit) NAND Flash Memory Hynix
Hynix Semiconductor Hynix
Other PDF  no available.
H27UAG8T2B Datasheet PDF : H27UAG8T2B pdf   
H27UAG8T2B image

DESCRIPTION
The H27UAG8T2B is a single 3.3V 16Gbit NAND flash memory. The Device contains 2 planes in a single die. Each plane is made up of the 512 blocks. Each block consists of 256 programmable pages. Each page contains 8,640 bytes. The pages are subdivided into an 8,192-bytes main data storage area with a spare 448-byte district. Page program operation can be performed in typical 1,600us, and a single block can be erased in typical 2.5ms. On chip control logic unit automates erase and program operations to maximize cycle endurance. E/W endurance is stipulated at 3,000 cycles when using relevant ECC and Error management. The H27UAG8T2B is a best solution for applications requiring large nonvolatile storage memory.

■ Multilevel Cell technology
■ Supply Voltage
- 3.3V device : Vcc = 2.7 V ~ 3.6 V
Vcc = 2.7 V ~ 3.6 V
■ Organization
- Page size : 8,640 Bytes(8,192+448 bytes)
- Block size : 256 pages(2M+112K bytes)
- Plane size : 512 blocks
■ Page Read Time
- Random Access: 200 ㎲ (Max.)
- Sequential Access : 25 ㎱ (Min.)
■ Write Time
- Page program : 1600 ㎲ (Typ.)
- Block erase : 2.5 ㎳ (Typ.)
■ Operating Current
- Read
- Program
- Erase
- Standby
■ Hardware Data Protection
- Program/Erase locked during power transitions
■ Endurance
- 3,000 P/E cycles (with 24 bit/ 1,024byte ECC)
■ Data Retention
- 10 Years
■ Package
- TSOP (12x20), 48Pin
- Wafer (Bare Die)
■ Unique ID for copyright protection

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