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G30N60C3D Datasheet PDF - Harris Semiconductor

Part NameDescriptionManufacturer
G30N60C3D 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Harris
Harris Semiconductor Harris
Other PDF  no available.
G30N60C3D Datasheet PDF : G30N60C3D pdf   
HGTG30N60C3D image

Description
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25°C and +150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

Features
• 63A, 600V at TC= +25°C
• Typical Fall Time - 230ns at TJ= +150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

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