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FDN338P Datasheet PDF - Shenzhen Jin Yu Semiconductor Co., Ltd.

Part NumberFDN338P HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
Description20V P-Channel Enhancement Mode MOSFET
FDN338P Datasheet PDF : FDN338P pdf   
FDN338P image

VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-1.6A= 115mΩ
RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155mΩ

Features
  Advanced trench process technology
  High Density Cell Design For Ultra Low On-Resistance

 

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