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GS881E18 Datasheet PDF - Giga Semiconductor

Part NameDescriptionManufacturer
GS881E18 512K x 18, 256K x 36 ByteSafe™ 8Mb Sync Burst SRAMs GSI
Giga Semiconductor GSI
GS881E18 Datasheet PDF : GS881E18 pdf   
GS881E36T-11.5 image

Functional Description
Applications
The GS881E18//36T is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
   
1.10 9/2000Features
• FT pin for user-configurable flow through or pipelined
    operation
• Dual Cycle Deselect (DCD) operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip write parity checking; even or odd selectable
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Common data inputs and data outputs
• Clock Control, registered, address, data, and control
• Internal self-timed write cycle
• Automatic power-down for portable applications
• 100-lead TQFP package
   

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