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IRFP340B Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
IRFP340B 400V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
IRFP340B Datasheet PDF : IRFP340B pdf   
IRFP340B image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

• 11A, 400V, RDS(on) = 0.54Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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