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IRF123 Datasheet PDF - Fairchild Semiconductor
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Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.
• Low RDs<on)
• VQS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• bss. Vos(on), Specified at Elevated Temperature
• Rugged
• Low Drive Requirements
• Ease of Paralleling
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