 Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site |
|
IRF123 Datasheet PDF - Fairchild Semiconductor
 |
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.
• Low RDs<on)
• VQS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• bss. Vos(on), Specified at Elevated Temperature
• Rugged
• Low Drive Requirements
• Ease of Paralleling
|
|
Other manufacturer searches related to IRF123
| Part Name | Description | PDF | Manufacturer |
| IRF120 |
N-Channel Power MOSFETs, 11 A, 60-100 V
|
|
New Jersey Semiconductor
|
| IRF140 |
N-Channel Power MOSFETs, 27 A, 60-100 V
|
|
New Jersey Semiconductor
|
| SD2931-11 |
RF power transistors HF/VHF/UHF N-channel MOSFETs
|
|
STMicroelectronics
|
| XF2J-0624-11 |
0.5 mm-pitch ZIF-Slide Type
|
|
Unspecified
|
| GS88018-100 |
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs
|
|
Giga Semiconductor
|
| MRF184 |
60 W, 1.0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs
|
|
Motorola => Freescale
|
| MRF184R1 |
1.0 GHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs
|
|
Motorola => Freescale
|
| MRF9060NBR1 |
945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
|
|
Freescale Semiconductor
|
| MRF9060MBR1 |
945 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs
|
|
Motorola => Freescale
|
| MRF9060R1 |
945 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs
|
|
Motorola => Freescale
|
한국어
简体中文
日本語
русский
español
