G40N60C3 Datasheet PDF - Fairchild Semiconductor
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G40N60C3 Datasheet PDF :
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75A, 600V, UFS Series N-Channel IGBT
The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.
Features
• 75A, 600V, TC= 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 100ns at TJ= 150oC
• Short Circuit Rating
• Low Conduction Loss
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