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G20N60C3D Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
G20N60C3D 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
G20N60C3D Datasheet PDF : G20N60C3D pdf   
HGTG20N60C3D image

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063).

Features
• 45A, 600V, TC= 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . .  108ns at TJ= 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

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