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FQPF6N80C Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω Fairchild
Fairchild Semiconductor Fairchild
FQPF6N80C Datasheet PDF : FQPF6N80C pdf   
FQPF6N80C image

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

• 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A
• Low Gate Charge (Typ. 21 nC)
• Low Crss (Typ. 8 pF)
• 100% Avalanche Tested

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