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FQPF4N90C Datasheet PDF - Fairchild Semiconductor

Part NumberFQPF4N90C Fairchild
Fairchild Semiconductor Fairchild
Description900V N-Channel MOSFET
FQPF4N90C Datasheet PDF : FQPF4N90C pdf   
FQPF4N90CT image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features
• 4A, 900V, RDS(on) = 4.2Ω @VGS = 10 V
• Low gate charge ( typical 17nC)
• Low Crss ( typical 5.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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