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FQPF4N80 Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQPF4N80 200V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
FQPF4N80 Datasheet PDF : FQPF4N80 pdf   
FQPF4N80 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 2.2A, 800V, RDS(on) = 3.6Ω @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 8.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



 

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