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FQPF19N20C_13 Datasheet PDF - Fairchild Semiconductor

Part NumberFQPF19N20C_13 Fairchild
Fairchild Semiconductor Fairchild
DescriptionN-Channel QFET® MOSFET
FQPF19N20C_13 Datasheet PDF : FQPF19N20C_13 pdf   
FQP19N20_13 image

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features
• 19 A, 200 V, RDS(on) = 170 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A
• Low Gate Charge (Typ. 40.5 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested

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