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FQPF12P10 Datasheet PDF - Fairchild Semiconductor

Part NumberFQPF12P10 Fairchild
Fairchild Semiconductor Fairchild
Description100V P-Channel MOSFET
FQPF12P10 Datasheet PDF : FQPF12P10 pdf   
FQPF12P10 image

General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

• -8.2A, -100V, RDS(on) = 0.29Ω @VGS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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