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FQP4N60 Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQP4N60 600V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQP4N60 Datasheet PDF : FQP4N60 pdf   
FQP4N60 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 4.4A, 600V, RDS(on)= 2.2Ω@VGS= 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 8.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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