These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC
converters, high efficiency switching for power management in portable and battery operated products.
• 45A, 30V, R
DS(on)= 0.018Ω@VGS= 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 105 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating