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FQP19N10L Datasheet PDF - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQP19N10L
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
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PDF
FQP19N10L Datasheet PDF : FQP19N10L pdf     
FQP19N10L image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

Features
• 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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Part Name
Description
PDF
Manufacturer
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Fairchild Semiconductor
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