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FQP13N50C Datasheet PDF - Fairchild Semiconductor

Part NumberFQP13N50C Fairchild
Fairchild Semiconductor Fairchild
Description500V N-Channel MOSFET
FQP13N50C Datasheet PDF : FQP13N50C pdf   
FQP13N50C image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts
based on half bridge topology.

Features
• 13A, 500V, RDS(on)= 0.48Ω@VGS= 10 V
• Low gate charge ( typical 43 nC)
• Low Crss ( typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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