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FQP13N50 Datasheet PDF - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQP13N50
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  no available.
PDF
FQP13N50 Datasheet PDF : FQP13N50 pdf     
FQPF13N50 image

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features
• 12.5 A, 500 V, RDS(on) = 430 mΩ (Max) @VGS = 10 V, ID = 6.25 A
• Low Gate Charge (Typ. 45 nC)
• Low Crss (Typ. 25 pF)
• 100% Avalanche Tested

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Unspecified
MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
SANYO -> Panasonic
MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
SANYO -> Panasonic
MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
SANYO -> Panasonic
MOSFET : N-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
SANYO -> Panasonic
MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
SANYO -> Panasonic
MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
SANYO -> Panasonic
MOSFET : N-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
SANYO -> Panasonic

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