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FQP12N60C Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQP12N60C 600V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
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FQP12N60C Datasheet PDF : FQP12N60C pdf   
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

 

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