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FQP12N20 Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQP12N20 200V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
FQP12N20 Datasheet PDF : FQP12N20 pdf   
FQP12N20 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.
   
Features
• 11.6A, 200V, RDS(on) = 0.28Ω @VGS = 10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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