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FQP11N40C Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQP11N40C N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ Fairchild
Fairchild Semiconductor Fairchild
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FQP11N40C Datasheet PDF : FQP11N40C pdf   
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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

• 10.5 A, 400 V, RDS(on)= 530 mΩ(Max.) @ VGS= 10 V, ID= 5.25 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested

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