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FQP10N20C Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQP10N20C N-Channel QFET® MOSFET 200 V, 9.5 A, 360 mΩ Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
FQP10N20C Datasheet PDF : FQP10N20C pdf   
FQP10N20C image

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching performance and high avalanche energy strength.

• 9.5 A, 200 V, RDS(on)= 360 mΩ(Max.) @ VGS= 10 V, ID= 4.75 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 40.5 pF)
• 100% Avalanche Tested

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