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FQD7N10 Datasheet PDF - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQD7N10
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  no available.
PDF
FQD7N10 Datasheet PDF : FQD7N10 pdf     
FQU7N10 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

Features
• 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V
• Low gate charge ( typical 5.8 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

 

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Description
PDF
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