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FQD5N60C Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD5N60C 600V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQD5N60C Datasheet PDF : FQD5N60C pdf   
FQU5N60C image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 2.8A, 600V, RDS(on)= 2.5Ω@VGS= 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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