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FQD2N100TM Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD2N100TM N-Channel QFET® MOSFET 1000 V, 1.6 A, 9 Ω Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
FQD2N100TM Datasheet PDF : FQD2N100TM pdf   
FQD2N100TM image

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features
• 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V, ID = 0.8 A
• Low Gate Charge ( Typ. 12 nC)
• Low Crss ( Typ. 5 pF)
• 100% Avalanche Tested
• RoHS Compliant

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