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FQD20N06_01 Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD20N06_01 60V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
FQD20N06_01 Datasheet PDF : FQD20N06_01 pdf   
FQD20N06_01 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features
• 16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V
• Low gate charge ( typical 11.5 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 150°C maximum junction temperature rating

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