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FQD13N10TF Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD13N10TF FQD13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Fairchild
Fairchild Semiconductor Fairchild
FQD13N10TF Datasheet PDF : FQD13N10TF pdf   
FQD13N10 image

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features
• 10 A, 100 V, RDS(on) = 180 mΩ (Max) @VGS = 10V, ID = 5.0 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested

 

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