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FQD13N06TM Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD13N06TM N-Channel QFET® MOSFET 60 V, 10 A, 140 mΩ Fairchild
Fairchild Semiconductor Fairchild
FQD13N06TM Datasheet PDF : FQD13N06TM pdf   
FQD13N06TM image

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features
• 10 A, 60 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V, ID = 5.0 A
• Low Gate Charge (Typ. 5.8 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested


 

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