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FQD13N06LTF Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD13N06LTF N-Channel QFET® MOSFET 60 V, 11 A, 115 mΩ Fairchild
Fairchild Semiconductor Fairchild
FQD13N06LTF Datasheet PDF : FQD13N06LTF pdf   
FQU13N06LTU_WS image

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features
• 11 A, 60 V, RDS(on) = 115 mΩ (Max) @ VGS = 10 V, ID = 5.5 A
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 17 pF)
• 100% Avalanche Tested
• Low Level Gate Drive Requirements Allowing Direct Operation form Logic Drivers

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