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FQD13N06L Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD13N06L 60V LOGIC N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQD13N06L Datasheet PDF : FQD13N06L pdf   
FQU13N06L image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features
• 11A, 60V, RDS(on) = 0.115Ω @VGS = 10 V
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• RoHS Compliant

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