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FQD12P10 Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD12P10 100V P-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
Other PDF  2002  
FQD12P10 Datasheet PDF : FQD12P10 pdf   
FQD12P10 image

General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Features
• -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant

 

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