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FQD12N20LTM Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD12N20LTM 200V Logic Level N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQD12N20LTM Datasheet PDF : FQD12N20LTM pdf   
FQD12N20LTM image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.

Features
• 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct opration from logic drivers
• RoHS Compliant
• Qualified to AEC Q101

 

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