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FQD10N20L Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD10N20L N-Channel QFET® MOSFET 200 V, 7.6 A, 360 mΩ Fairchild
Fairchild Semiconductor Fairchild
FQD10N20L Datasheet PDF : FQD10N20L pdf   
FQU10N20L image

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

• 7.6 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.8 A
• Low Gate Charge (Typ. 13 nC)
• Low Crss (Typ. 14 pF)
• 100% Avalanche Tested
• Low level gate drive requirement allowing direct operation from logic drivers


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