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FQD10N20CTF Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD10N20CTF N-Channel QFET® MOSFET 200 V, 7.8 A, 360 mΩ Fairchild
Fairchild Semiconductor Fairchild
FQD10N20CTF Datasheet PDF : FQD10N20CTF pdf   
FQD10N20C image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.

Features
• 7.8 A,200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, ID= 3.9 A
• Low Gate Charge (Typ.  20 nC)
• Low Crss (Typ. 40.5pF)
• 100% Avalanche Tested

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