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FQAF13N80 Datasheet PDF - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQAF13N80
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  2001  
PDF
FQAF13N80 Datasheet PDF : FQAF13N80 pdf     
FQAF13N80 image

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features
• 8.0 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 4.0 A
• Low Gate Charge (Typ. 68 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested

 

Part Name
Description
PDF
Manufacturer
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ON Semiconductor
N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω
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N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω
Unspecified
MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
SANYO -> Panasonic
MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
SANYO -> Panasonic
MOSFET : P-Channel Silicon MOSFET/SBD : Schottky Barrier Diode
SANYO -> Panasonic
MOSFET : N-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
SANYO -> Panasonic
MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
SANYO -> Panasonic
MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
SANYO -> Panasonic
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
SANYO -> Panasonic

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