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FQA8N80_F109 Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQA8N80_F109 800V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
FQA8N80_F109 Datasheet PDF : FQA8N80_F109 pdf   
FQA8N80_F109 image

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Features
• 8.4A, 800V, RDS(on)= 1.2Ω@VGS= 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 20pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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