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FQA13N50C_F109 Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQA13N50C_F109 N-Channel QFET® MOSFET 500 V, 13.5 A, 480 mΩ Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
FQA13N50C_F109 Datasheet PDF : FQA13N50C_F109 pdf   
FQA13N50C_F109 image

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
   
Features
• 13.5 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V,
    ID = 6.75 A
• Low Gate Charge (Typ. 43 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
   

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