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FGB30N6S2D Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth™ Diode Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
FGB30N6S2D Datasheet PDF : FGB30N6S2D pdf   
FGB30N6S2DT image

General Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive.

Features
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125°C
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss

 

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