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FGB30N6S2D Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode Fairchild
Fairchild Semiconductor Fairchild
FGB30N6S2D Datasheet PDF : FGB30N6S2D pdf   
FGK60N6S2D image

General Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits

IGBT formerly Developmental Type TA49336
Diode formerly Developmental Type TA49390

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