datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Fairchild  >>> FDS4435BZ_07 PDF

FDS4435BZ_07 Datasheet PDF - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS4435BZ_07
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  no available.
PDF
FDS4435BZ_07 Datasheet PDF : FDS4435BZ_07 pdf     
FDS4435BZ_07 image

General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features
■ Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
■ Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
■ Extended VGSS range (-25V) for battery applications
■ HBM ESD protection level of ±3.8KV typical (note 3)
■ High performance trench technology for extremely low rDS(on)
■ High power and current handling capability
■ Termination is Lead-free and RoHS compliant

Page Link's: 1  2  3  4  5  6 
 

Part Name
Description
PDF
Manufacturer
N-Channel PowerTrench® MOSFET
ON Semiconductor
N-Channel PowerTrench MOSFET
KEXIN Industrial
P-Channel 2.5V Specified PowerTrench® MOSFET
ON Semiconductor
150V N-Channel PowerTrench® MOSFET
ON Semiconductor
40V N-Channel PowerTrench MOSFET
KEXIN Industrial
40V N-Channel PowerTrench MOSFET
TY Semiconductor
P-Channel 1.8V Specified PowerTrench® MOSFET
TY Semiconductor
60V N-Channel PowerTrench® MOSFET
TY Semiconductor
P-Channel 1.8V Specified PowerTrench® MOSFET
TY Semiconductor
Single N-Channel 2.5V Specified PowerTrench® MOSFET
ON Semiconductor

Share Link : 

한국어 简体中文 日本語 русский español

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]