This P-Channel MOSFET is produced using Fairchild Semiconductorâs advanced PowerTrenchÂ® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
â Max rDS(on) = 20mâ¦ at VGS = -10V, ID = -8.8A
â Max rDS(on) = 35mâ¦ at VGS = -4.5V, ID = -6.7A
â Extended VGSS range (-25V) for battery applications
â HBM ESD protection level of Â±3.8KV typical (note 3)
â High performance trench technology for extremely low rDS(on)
â High power and current handling capability
â Termination is Lead-free and RoHS compliant