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FDN360P Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FDN360P Single P-Channel, PowerTrench® MOSFET Fairchild
Fairchild Semiconductor Fairchild
FDN360P Datasheet PDF : FDN360P pdf   
FDN360P image

General Description
This  P-Channel  Logic Level  MOSFET is produced using Fairchild Semiconductor  advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for  low voltage and battery powered applications where low in-line power loss and fast switching are required.

·  –2A, –30 V.  RDS(ON)= 80 mW@ VGS= –10 V
                    RDS(ON)= 125mW@ VGS= –4.5 V
·  Low gate charge (6.2 nC typical)
·  High performance trench technologyfor extremely low RDS(ON).
·  High power version of industry Standard SOT-23 package.Identical pin-out to SOT-23 with 30%
higher power handling capability.

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